smd type features adoption of fbet, mbit processes high breakdown voltage and large current capacity fast switching speed 2SC3648 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6v collector current i c 0.7 a collector current (pulse) i cp 1.5 a p c 500 mw p c* 1.3 w jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on ceramic board (250 mm 2 x 0.8 mm) collector power dissipation electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = 120v , i e =0 0.1 ua emitter cut-off current i ebo v eb =4v,i c =0 0.1 ua collector-base breakdown voltage v (br)cbo i c = 10ua , i e = 0 180 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 160 v emitter-base breakdown voltage v (br)ebo i e = 10ua , i c =0 6 v dc current gain h fe v ce =5v,i c = 100ma 100 400 collector-emitter saturation voltage v ce(sat) i c = 250ma , i b = 25ma 0.2 0.5 v base-emitter saturation voltage v be(sat) i c = 250ma , i b = 25ma 0.85 1.2 v gain-bandwidth product f t v ce = 10v , i c = 50ma 120 mhz collector output capacitance c ob v cb = 10v , i e = 0 , f = 1mhz 11 pf turn-on time t on 60 storage time t stg 900 fall time t f 60 ns see test circuit. product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
smd type electrical characteristics curves test circuit h fe classification marking rank r s t h fe 100 200 140 280 200 400 cd 2SC3648 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
smd type 2SC3648 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
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