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| MMBT5550 NPN General Purpose Amplifier August 2005 MMBT5550 NPN General Purpose Amplifier * This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking: 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T Symbol VCEO VCBO VEBO IC TJ, Tstg NOTES: a = 25C unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 140 160 6.0 600 -55 ~ +150 Units V V V mA C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Ta = 25C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Test Condition IC = 1.0mA, IB = 0 IC = 100A, IE = 0 IE = 10mA, IC = 0 VCB = 100V, IE = 0 VCB = 100V, IE = 0, Ta = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Min. 140 160 6.0 Max. Units V V V 100 100 50 nA A nA On Characteristics DC Current Gain 60 60 20 250 0.15 0.25 1.0 1.2 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter On Voltage (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MMBT5550 Rev. A MMBT5550 NPN General Purpose Amplifier Electrical Characteristics Symbol fT Cobo Cibo Ta = 25C unless otherwise noted Parameter Current Gain Bandwidth Product Output Capacitance Input Capacitance Test Condition IC = 10mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VBE = 0.5V, IC = 0, f = 1.0MHz Min. 50 Max. Units MHz Small Signal Characteristics 6.0 30 pF pF Thermal Characteristics T =25C unless otherwise noted a Symbol PD RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max. 350 2.8 357 Units mW mW/C C/W * Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06." Package Marking and Ordering Information Device Marking 1F Device MMBT5550 Package SOT-23 Reel Size 7" Tape Width -- Quantity 3,000 2 MMBT5550 Rev. A www.fairchildsemi.com MMBT5550 NPN General Purpose Amplifier Typical Performance Characteristics Figure 1. Typical Pulsed Current Gain vs Collector Current hFE - TYPICAL PULSED CURRENT GAIN 250 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VCESAT - COLLECTOR EMITTER VOLTAGE (V) 0.5 200 125 C o 0.4 = 10 150 0.3 25 C o 25 C o 100 0.2 -40 C 50 o 125 C o VCE = 5V 0.1 - 40 C 1 10 100 o 0 0.1 0.0 0.2 0.5 1 2 5 10 20 50 100 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) Figure 3. Base-Emitter Saturation Voltage vs Collector Current 1.0 Figure 4. Base-Emitter On Voltage vs Collector Current VBEON - BASE EMITTER ON VOLTAGE (V) 1.0 VBESAT - BASE EMITTER VOLTAGE (V) = 10 0.8 - 40 C o - 40 C o 25 C 0.6 o 0.8 125 C 0.4 o 0.6 25 C 125 C o o 0.4 0.2 0.2 VCE = 5V 1 10 100 0.0 1 10 100 200 0.0 0.1 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) Figure 5. Collector Cutoff Current vs Ambient Temperature 50 VCB = 100V Figure 6. Input and Output Capacitance vs Reverse Voltaget 30 I CBO- COLLE CTOR CURRENT (nA) f = 1.0 MHz 25 CAPACITANCE (pF) 20 10 15 10 C ib C cb 1 10 100 5 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( C) 125 0 0.1 V CE - COLLECTOR VOLTAGE (V) 3 MMBT5550 Rev. A www.fairchildsemi.com MMBT5550 NPN General Purpose Amplifier Typical Performance Characteristics Figure 7. Power Dissipation vs Ambient Temperature 500 (Continued) PD-POWER DISSPATION (mW) 400 300 200 100 0 0 25 50 75 100 0 125 150 TEMPERATURE( C) 4 MMBT5550 Rev. A www.fairchildsemi.com MMBT5550 NPN General Purpose Amplifier Mechanical Dimensions SOT-23 Dimensions in Millimeters 5 MMBT5550 Rev. A www.fairchildsemi.com MMBT5550 NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 6 MMBT5550 Rev. A www.fairchildsemi.com |
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