PART |
Description |
Maker |
LBSS138WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
LBSS139DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
LBSS138WT1G |
Power MOSFET 200 mAmps, 50 Volts
|
Leshan Radio Company
|
BSS138LT1/D BSS138LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23 Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23 Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
VN2410L-D |
Small Signal MOSFET 200 mAmps, 240 Volts N-Channel TO-92
|
ON Semiconductor
|
MGSF1N02LT1 MGSF1N02LT3 MGSF1N02L MGSF1N02LT1-D |
Power MOSFET 750 mAmps, 20 Volts 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ONSEMI[ON Semiconductor]
|
NTES1P02 NTES1P02-D |
P?Channel Power MOSFET Power MOSFET 50 mAmps, 20 Volts P-Channel(50mA,20V,P沟道增强型MOS场效应管) Power MOSFET 50 mAmps, 20 Volts P-Channel SC-75
|
ON Semiconductor
|
LBSS84LT1G-15 |
Power MOSFET 130 mAmps
|
Leshan Radio Company
|
MGSF1N02ELT1-D MGSF1N02ELT1G |
Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
|
ON Semiconductor
|
IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268 90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
|