| PART |
Description |
Maker |
| NPT2020 |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| NPTB00050 NPTB00050-15 |
Gallium Nitride 28V, 50W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| NPTB00025 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| STK4192 STK4192II |
AF Power Amplifier (Split Power Supply) (50W 50W min, THD = 0.4%)
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| STK4191V |
50 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM18
AF Power Amplifier (Split Power Supply) (50W 50W min, THD = 0.08%)
AF Power Amplifier (Split Power Supply) (50W 50W min / THD = 0.08%)
|
SANYO[Sanyo Semicon Device]
|
| HHD25ZEB HHD25ZED HHD20YGE HHD20ZGB HHD20ZGE |
Coaxial Cable; Coaxial RG/U Type:402; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Color:Black; Leaded Process Compatible:Yes; Voltage Nom.:30V RoHS Compliant: Yes HHD25系列20/25A，半砖DC / DC转换器输入双输出4V/48V
HHD25 Series . 20/25A/ Half-Brick DC/DC Converter 24V/48V Input Dual Output
HHD25 Series . 20/25A, Half-Brick DC/DC Converter 24V/48V Input Dual Output HHD25系列20/25A，半砖DC / DC转换器输入双输出4V/48V
|
GE Security, Inc.
POWER-ONE[Power-One]
|
| LTC1921 1921F LTC1921CS8 LTC1921IS8 LTC19211 LTC19 |
Dual 48V Supply and Fuse Monitor
Dual ?48V Supply and Fuse Monitor
From old datasheet system
Dual -48V Supply and Fuse Monitor; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to 70°C 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
|
Linear Technology, Corp.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| MIL-STD348A/402 CECC22210 |
RPC-N 50W Jack ?7/16 50W Plug
|
Rosenberger Hochfrequen...
|
| RFP-375375N6Z50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
