| PART |
Description |
Maker |
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| AT9019-10 |
SILICON ABRUPT JUNCTION TUNING VARACTOR 33 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Advanced Semiconductor, Inc.
|
| MA45851 |
SILICON ABRUPT TUNING VARACTOR DIODE 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Advanced Semiconductor, Inc.
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
| 1N4800A 1N4795B 1N4787A |
100 pF, 17 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 22 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 28 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| MA45334 |
SILICON ABRUPT TUNING VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| GVD1202-001 |
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
SPRAGUE-GOODMAN ELECTRONICS INC
|
| PC116C PC128 PG210C PG210B PC117 |
22 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
33 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
10 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
47 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| MV104ZL1 |
32 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-92
|
Motorola Mobility Holdings, Inc.
|
| AT12020-21 AT1202021 |
SILICON ABRUPT VARACTOR DIODE
From old datasheet system
|
ASI[Advanced Semiconductor]
|
| EP1024B EP1024T |
UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
|
