| PART |
Description |
Maker |
| RFP-10N50TV |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-20N50TPR |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| PO6-TMP-025-1 PO6-TMLP-025 FL-TMP-025-1 TNC-TMP-1 |
Non-reflective Terminations (N, TNC, SSMA, POB, FL, and PO6) 非（不适用，跨国公司，多址，平衡原则，佛罗里达州，并PO6反射终止
Non-reflective Terminations (N / TNC / SSMA / POB / FL / and PO6)
Non-reflective Terminations (N TNC SSMA POB FL and PO6)
Non-reflective Terminations (N/ TNC/ SSMA/ POB/ FL/ and PO6)
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| 04023J0R1PBWTR 06035J1R8BBTTR 02011J4R7CASTR 06033 |
CAP CERAMIC .1PF 25V 0402 RF SMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000001 uF, SURFACE MOUNT, 0402
CAP CERAMIC 1.8PF 50V 0603 RFSMD CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 50 V, 0.0000018 uF, SURFACE MOUNT, 0603
Thin-Film Technology
Thin-Film RF/Microwave Capacitors
|
AVX, Corp.
AVX Corporation
|
| MFE201 MFE202 MFE203 |
N-CHANNEL DUAL-GAE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Motorola, Inc
|
| MFE211 MFE212 |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
Digitron Semiconductors
|
| TCD-2008B50J-G |
Chip Terminations
|
American Accurate Components, Inc.
|
| RFP-10-50TV |
Flanged Terminations
|
Anaren Microwave
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
