| PART |
Description |
Maker |
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT2058R09 HAT2058R-EL-E |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, PLASTIC, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| SSM3K01T |
3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Semiconductor
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| ECH8668 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK1405 2SK1405-E |
15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET
|
Renesas Electronics Corporation
|
| CMLDM758513 |
SURFACE MOUNT SILICON N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS
|
Central Semiconductor Corp
|
| 2SJ555 2SJ555-E |
60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| ECH8660 ENA1358 |
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
|
