| PART |
Description |
Maker |
| 2SD1843 2SD1843-T |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING NPN硅外延晶体管（达林顿接线）低频功率放大器和低速开
Low-freq. power amp., low-speed switching power tr.
|
NEC, Corp.
NEC[NEC]
|
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SA1607 |
Fast switching speed. High gain-bandwidth product. Low saturation voltage.
|
TY Semiconductor Co., Ltd
|
| AP2344GEN-HF AP2344GEN-HF14 |
Capable of 1.8V Gate Drive, Lower Gate Charge
Fast Switching Performance
|
Advanced Power Electronics Corp.
|
| RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| 2SK2504 |
Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Easy to parallel.
|
TY Semiconductor Co., Ltd
|
| 2SK2503 |
Low on-resistance. Fast switching speed. Wide SOA (safe operating area). Easy to parallel.
|
TY Semiconductor Co., Ltd
|
| SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道，低Qg，快速开WFET，超低开关损
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| 1N4148S |
Fast Switching Speed For General Purpose Switching Applications High Conductance
|
TY Semiconductor Co., L...
|
